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The chip level optoelectronics integration on silicon-based wafers not only reduces chip size, cost, power consumption, but also improves reliability. The integrated fabrication of photonic devices using CMOS process based on silicon materials is considered to be one of the technologies which continues the Moore's Law.

Precision measurement technologies such as Frequency Modulated Continuous Wave (FMCW), Optical Frequency Domain Reflection (OFDR), and Frequency Sweep Interferometry (FSI) require the laser be able to continuously sweep the wavelength without mode hopping over a wide range, and have high sweep linearity and narrow linewidth.

III-V Laser Chip Technology takes III-V compound semiconductors like indium phosphide as core materials. It acts as the fundamental core foundation for optical transmission, precision measurement, optical sensing and optical quantum applications. INXUNTECH is capable of III-V laser chip design, processing and large-scale heterogeneous integration with silicon photonics, developing high-power, narrow-linewidth, wide-sweep-range lasers and highly integrated optoelectronic products.